University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
For first-half 2016, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €55.5m, down 31% on first-half 2015's €80.7m, reflecting the ongoing weak demand environment in the firm's ...
Tags: Aixtron SE, MOCVD, GaN
Raytheon Company of Waltham, MA, USA has given the US Army a look into the future of missile defense technology, as the firm provided its comprehensive vision for the next generation of air and missile defense radar. The information was ...
Tags: Raytheon, LTAMDS, Missile Defense Sensor
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) says that in the last fiscal quarter it has delivered several hundred units of its gallium nitride (GaN)-based solid-state power ...
Tags: GaN-based SSPAs, HEMT, Advantech Wireless
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Epistar Corp of Hsinchu Science-based Industrial Park, Taiwan (the world's largest manufacturer of LED epiwafers and chips) has ordered ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched a new generation of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) with a number of improvements to ...
Tags: GaN-based SSPAs, Advantech Wireless, HEMT
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
For fiscal first-quarter 2017 (to 2 July 2016), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has reported revenue of $697.6m, up ...
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced its Phase Eight ...
Tags: GaN Device, integrated circuits
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Vishay Intertechnology Inc of Malvern, PA, USA has expanded its offering of mid-power UV LEDs in the 365nm wavelength range with a new device featuring a silicone lens in a compact 1.6mm by 1.6mm by 1.4mm surface-mount package. Designed to ...