For first-quarter 2013, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported revenue of $184.2m, down 15% on $216.7m on a year ago and 21% on $233.6m last quarter. ...
Tags: TriQuint, Mobile Device
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM Tech, Power Transistor, Electrical
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has produced what are reckoned to be the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafers, which ...
Tags: Triquint, Electronics, HEMT devices
Mass production of GaN template wafers based on sapphire substrates could free LED manufacturers' MOCVD reactors for more LED production and lower component cost helping drive the deployment of SSL. Hitachi Cable has become the second ...
Tags: Hitachi Cable, GaN-Template LED, Lighting
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
Following the December 2012 launch of the Works with Soraa program, the lighting industry’s first lamp and fixture validation program, Soraa announced the addition of nine new fixture manufacturers. The companies Excelsior Lighting, ...
Hitachi Cable, Ltd. announced today that it has developed a new mass-production technology for GaN-templates, in which a high-quality gallium nitride (GaN) single-crystal thin film is grown on a sapphire substrate. Using this product as a ...
Tags: Hitachi, Gan-Template Product
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...