Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...
Tags: Fukuda Crystal Lab, a diameter, Electrical
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has added a new product in its portfolio – the p-type truly bulk AMMONO-GaN substrate – to be presented by Dr Marcin Zajac ...
Tags: Ammono, Substrates, Electrical
Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component
Google and the Institute of Electrical and Electronic Engineers’ Power Electronics Society (IEEE PELS) have launched the Little Box Challenge, an open competition with a $1m prize to create a much smaller but higher-power-density ...
Tags: inverters, GaN SiC, Power Inverter
Advantech Wireless of Montreal, Canada, which manufactures satellite, RF equipment and microwave systems, says that its SapphireBlu Series of UltraLinear gallium nitride (GaN)-based high-power amplifiers (HPAs) powered the ...
Tags: GaN HEMT HPA MMIC
Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reached a defense production milestone, completing the Defense Production Act Title III Gallium Nitride on Silicon Carbide (GaN ...
Tags: TriQuint, GaN, RF, GaN-on-SiC
The vertical-cavity surface-emitting laser (VCSEL) market is increasing at a compound annual growth rate (CAGR) of 33.1% from $501m in 2013 to nearly $2.1bn in 2018, estimates BCC Research in its report ‘Vertical-Cavity ...
Tags: VCSEL Market, laser
Agnitron Technology Inc of Eden Prairie, MN, USA is scheduled to ship its latest 1500°C+ reactor upgrade for the Veeco metal-organic chemical vapor deposition (MOCVD) D-series Legacy System platform. The single 2”- or ...
Tags: Veeco MOCVD, Reactor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is to give application-focused ...
Tags: EPC, E-mode, GaN, FETs, Electrical, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is showcasing its latest devices in booth 13 at the 16th European ...
Tags: GaN Systems Power electronics, Electrical, Electronics
Singapore's Nanyang Technological University and Turkey's Bilkent University have developed a graded multiple quantum well (MQW) structure with the aim of increasing light output power and reducing efficiency droop in 450nm indium gallium ...
Tags: LED, LED Light, Electrical, Electronics