This quarter, Plessey Semiconductors plans to sample its GaN-on-Silicon LEDs. Samples are due out in December with production sales beginning in March for both LED die and packaged devices. It is the culmination of a decade of ...
Tags: LED
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has seen its third-quarter 2012 equipment orders pick up by 15% sequentially to €34.5m. The company says that current Q4/2012 quotation levels suggest a continuation of ...
NGK Insulators Ltd of Nagoya, Japan has developed gallium nitride (GaN) wafers that significantly reduce defects and approximately double the luminous efficiency of green light-emitting diodes (LEDs) over previous models. The GaN wafers ...
It is 50 years since laser scientist Dr Nick Holonyak and his team of researchers at General Electric made the breakthrough with a new type of alloy that allowed them to create the first practical, visible-spectrum LED and paved the way for ...
Tags: LED Lighting
Soraa Inc of Fremont,CA,USA,which develops solid-state lighting technology built on'GaN on GaN'(gallium nitride on gallium nitride)substrates,says that as of 1 November 2012 its full-spectrum GaN-on-GaN LED MR16 lamps ,China,South ...
Tags: LED MR16 lamp, GaN on GaN substrates, USA, Soraa Inc.
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q3/2012 the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, ordered two Aixtron Close Coupled Showerhead (CCS), metal organic chemical vapour ...
AIXTRON SE today announced that the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, has made a purchase order for two AIXTRON Close Coupled Showerhead (CCS) systems to extend the center's nitride semiconductor research. The ...
Cree Inc of Durham,NC,USA has launched a range of 50V gallium nitride(GaN)high-electron-mobility transistor(HEMT)devices that,it is claimed,enable a significant reduction in the energy needed to power cellular networks. The world's ...
Tags: GaN RF, HEMT technology, cost saving, cellular-network
BluGlass Ltd of Silverwater, Australia says it is now able to produce gallium nitride (GaN) with industry standard impurity levels using its low temperature remote-plasma chemical vapor deposition (RPCVD) technology. The RPCVD grown GaN ...
Tags: GaN, BluGlass Ltd, Australia, carbon and oxygen reduction
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
AMCAD Engineering of Limoges,France(which provides test and modelling tools for RF and microwave IC applications)has announced an upgrade to its PIV pulse current-voltage semiconductor device analyzer family for the next generation of ...
Tags: AMCAD, HVFS, transistor, GaN
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA,is showcasing twelve new products at European Microwave Week in Amsterdam next week(29-31 October).These include new packaged ...
Researchers in Korea and India have used zinc oxide (ZnO) nanorods on the rear side tolight-emitting diodes (LEDs) grown on c-plane sapphire [Joo Jin et al, Jpn. J. Appl. Phys., vol51, p102101, 2012]. The researchers were based at Chonbuk ...
Tags: LED
RF Micro Devices Inc of Greensboro,NC,USA has been awarded a$2.1m contract from the US Defense Advanced Research Projects Agency(DARPA)to enhance the thermal efficiency of gallium nitride(GaN)circuits used in high-power radar and other ...
Tags: RFMD, GaN technology, DAPPA, NJTT, military system
At its latest board meeting,Tokyo-based chemical manufacturer Showa Denko K.K.(SDK)has decided to split off and transfer its gallium nitride(GaN)LED epitaxial wafer and chip production business to its subsidiary TS Opto Co Ltd(which was ...
Tags: SDK, GaN LEDs, Toyoda Gosei Co Ltd, chemical manufacture, TS Opto