Panasonic Corp of Osaka, Japan says that it has developed gallium nitride (GaN) diodes that can not only operate at a high current of 7.6kA/cm2 - four times greater than that tolerated by conventional silicon carbide (SiC) diodes with a ...
Tags: Panasonic, GaN Diodes
BluGlass Ltd of Silverwater, Australia says that one of its key specialized epitaxy customers has committed to an order for about $300,000 of foundry development, to be delivered over the next six months. The customer is developing a ...
Tags: BluGlass, solar cells, LED
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has released a 300W/400W X-band SapphireBlu SSPA/SSPB (solid-state power amplifier/solid-state power block) - based on the firm's ...
Tags: Advantech Wireless, GaN, X-Band SSPA/SSPB
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
UK-based Plessey has developed a patented technology for chip-scale optics (CSO) based on its gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) LEDs. Chip-scale optics permits the design of light emission angles down to ...
Tags: Plessey, GaN-on-Si LEDs, silicon, CSO technology
Accel-RF Instruments Corp of San Diego, CA, USA (which produces turn-key reliability and performance characterization test systems for compound semiconductors) says that it has 'unplugged' the RF SMART Fixture from its automated test ...
Tags: Accel-RF, SMART Fixture, semiconductor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has published a handbook, 'DC-DC ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
Exhibiting in Stand 250 at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has announced a ten-fold ...
Tags: EuMW 2015, GaN, Diamond Microwave
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...
At European Microwave Week (EuMW 2015) in Paris, France (8–10 September), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...
Guerrilla RF Inc of Greensboro, NC, USA - which provides monolithic microwave integrated circuits (MMICs) to wireless infrastructure original equipment manufacturers - has added to its family of high-linearity gain blocks (which features a ...