For second-quarter 2012,RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has reported revenue of$178m,down 22%on$228.8m a year ago and down 18%on$216.7m in Q1/2012(exceeding the ...
Tags: TriQuint, RF, Semiconductor, USA
The power discrete and module market will grow by almost$9bn to$26.2bn in 2016,forecasts the 15th edition of an annual report from IMS Research,which this year includes more comparisons of wide-bandgap(silicon carbide and gallium ...
Tags: GaN, SiC, IMS Research, silicon, semiconductor
Veeco Instruments Inc.announced that AZZURRO Semiconductors AG,a pioneer in GaN-on-Si technology headquartered in Germany,has recently placed into production the TurboDisc®K465i™gallium nitride(GaN)Metal Organic Chemical Vapor ...
Tags: The MOCVD system, GaN-on-Silicon Epiwafer, Dr.Markus Sickmöller
Azzurro receives EUR 2.6 million grant for GaN-on-Si LED wafer development 24 Jul 2012 The European Regional Development Fund and the Free State of Saxony award EUR 2.6 million to Azzurro Semiconductors for gallium-nitride-on-silicon wafer ...
Toshiba to start mass production of GaN-on-Si white LEDs in October Tokyo-based semiconductor manufacturer Toshiba Corp says that in October it will start mass production of white LEDs on a new production line that it will construct in ...
Tags: Toshiba, GaN-on-Si, white LED, semiconductor manufacturer
RFMD's quarterly revenue and margins grow,driven by diversified markets For its fiscal first-quarter 2013(to end-June 2012),RF Micro Devices Inc of Greensboro,NC,USA has reported revenue of$202.7m.This is down 5.4%on$214.2m a year ago but ...
Tags: RFMD, quarterly revenue, CPG, non-GAAP basis, power amplifiers
AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium ...
Aixtron launches AIX G5+ 5x200mm GaN-on-Si package for G5 With its latest product, AIX G5+, deposition equipment maker Aixtron SE of Herzogenrath, Germany has introduced a 5x200mm GaN-on-Si (gallium nitride on silicon) technology package ...
Tags: new product, GaN-on-Si, MOCVD
With its latest product,AIX G5+,AIXTRON SE has introduced a 5x200 mm GaN-on-Si(Gallium Nitride on Silicon)technology package for its AIX G5 Planetary Reactor platform.Following a customer-focused development program,this technology was ...
Tags: AIXTRON, AIX G5+, GaN-on-Si technology, MOCVD
Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian), an established ...
Azzurro Semiconductors AG's development of next generation gallium nitride on 200 mm silicon substrates is supported by the local government of Saxony.The minister for science and technology,Sabine von Schorlemer handed the official grant ...
Tags: Azzurro, semiconductors, LED, GaN-on-Si-wafer-technology
AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,says that its development of next-generation GaN on 200mm silicon substrates is being supported by the ...
Tags: AZZURRO, GaN-on-Si, SAB, LED, power semiconductor
GaN Systems Inc of Ottawa,Ontario,Canada,which is a fabless provider of gallium nitride(GaN)-based power switching semiconductors for power conversion and control applications,and UK-based Converter Technology Ltd,which provides design ...
Product announcements during the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada in late June highlighted how military applications will continue to grow and drive the fundamental development of semiconductor ...
Tags: Military, development, IMS
Researchers at University of California,Santa Barbara(UCSB)have developed what is claimed to be the first violet nonpolar vertical-cavity surface-emitting lasers(VCSELs)based on m-plane gallium nitride(GaN). The latest development is ...