An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
Synthetic diamond materials firm Luxembourg-registered Element Six (part of the De Beers Family of Companies, and co-owned by Belgian materials group Umicore) has acquired the assets and intellectual property of Group4 Labs Inc of Menlo ...
Tags: diamond materials, Electronics
Xilinx Inc of San Jose, CA, USA, which provides all-programmable field-programmable gate arrays (FPGAs), systems-on-chip (SoCs) and 3D ICs, and Japan's Sumitomo Electric Industries Ltd are collaborating to reduce capital expenditure (CapEx) ...
Tags: SEI, Electrical, Electronics
Lumileds targets reduction in LED component count for lamps with mid-power devices that integrate two emitters. Philips Lumileds has introduced the two-die Luxeon 3535 2D mid-power LEDs that, among other potential usages, can lower ...
Tags: Power LEDs, LED, Lighting
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
The 59th annual IEEE International Electron Devices Meeting (IEDM) has issued a Call for Papers seeking original work in microelectronics research and development. The paper submission deadline is Monday, June 24, 2013 at 23:59 p.m. Pacific ...
Tags: Electrical, Electronics, IEDM
LIVERMORE, Calif. & TOKYO -- Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, and Toshiba Corporation (TOKYO:6502), a world-leading electric manufacturer, today announced that they have ...
Tags: Bridgelux, Toshiba, LED Business
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has agreed to sell its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Tokyo-based semiconductor manufacturer Toshiba Corp. The firms will also ...
Companies Enter Into Agreement for Sale of GaN-On-Silicon Technology / Chip Related Assets to Toshiba, With Expanded Licensing and Manufacturing Collaboration Bridgelux Inc., a leading developer and manufacturer of LED lighting ...
Tags: LED Business, LED
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD