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AFM
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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Two-Dimensional Gallium Nitride with Graphene Encapsulation
Sep 28, 2016Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
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Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas
Jun 20, 2016Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
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Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate
Apr 29, 2016Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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Non-Alloyed Contacts For Gallium Arsenide Devices
Mar 9, 2016Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...
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Single-Crystal Gallium Arsenide on Quasi-Nominal Silicon
Dec 16, 2015Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
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Mitsubishi Uses Laytec in-Situ Monitoring to Grow Crack-Free GaN-on-Si HEMTs
Dec 3, 2015The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
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Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes
Dec 2, 2015Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
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NREL and University of California Santa Barbara Have Developed a Wafer Bonding Technology
Jul 17, 2015The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...
Tags: electronic components, semiconductor, TCO IZO Tandem solar cells
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South Korea Has Launched Nx-Hivac
May 28, 2015Atomic force microscopy (AFM) system maker Park Systems Corp of Suwon, South Korea has launched NX-Hivac, which is claimed to be the only high-vacuum AFM system on the market that meets the current and future needs for failure analysis in ...
Tags: AFM, Park Systems
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Anvil and Cambridge Centre for GaN Grown Cubic GaN on 3c-Sic on Silicon Wafers
Dec 12, 2014Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
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NCSU Has Been Developing Homo-Epitaxy of Non-Polar AIN with a View to DUV
Oct 30, 2014North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
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Oxford Instruments Hosted Third Series of Annual Seminars for The Nanotechnology Industry
Sep 23, 2014In Kolkata and Delhi, Oxford Instruments is hosting its third series of annual seminars for the nanotechnology industry in India. ‘Bringing the Nanoworld Together 2014’ will showcase nanotechnology tools and their use in ...
Tags: Oxford Instruments, Seminars, Electronics
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