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Bilkent University
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Grading Ingan Wells to Increase LED Light Output Power
Aug 16, 2014Singapore's Nanyang Technological University and Turkey's Bilkent University have developed a graded multiple quantum well (MQW) structure with the aim of increasing light output power and reducing efficiency droop in 450nm indium gallium ...
Tags: LED, LED Light, Electrical, Electronics
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Gallium Nitride Thin-Film Transistors Produced at Less Than 250ºC
Jul 10, 2014Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
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Researchers Have Demonstrated a Last Quantum Barrier Structure for InGaN
May 13, 2014Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
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Researchers in China and Turkey Have Been Using Varying-Thickness GaN Barriers
Aug 9, 2013Researchers in China and Turkey have been using varying-thickness gallium nitride (GaN) barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve hole distributions and thus to reduce efficiency droop effects ...
Tags: InGaN LEDs, Electrical, Electronics
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Meaglow Announced The Installation of a Hollow Cathode Plasma Source
Jul 31, 2013Meaglow Ltd of Thunder Bay, Ontario, Canada, a privately held firm that produces epitaxy equipment and molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD) accessories, as well as providing specialized thin ...
Tags: Bilkent University, Electrical
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Researchers Have Developed a New Material That Absorbs a Wide Range of Wavelengths
Nov 2, 2011Solar power may be on the rise, but solar cells are only as efficient as the amount of sunlight they collect. Under the direction of a new McCormick professor, researchers have developed a new material that absorbs a wide range of ...
Tags: solar