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HUAWEI Said The New Graphene Battery Performance Spike Market Most of The Lithium Battery

Dec 12, 2016

Graphene battery is the bubble it Since October 23, 2015, HUAWEI and the United Kingdom, University of Manchester to achieve graphene application research project, we look forward to HUAWEI launched the subversive results, but who are ...

Tags: battery, HUAWEI, graphene

Peregrine Launches Monolithic 100W RF SOI Power Limiter

Oct 12, 2016

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE45361 monolithic 100W power limiter. The ...

Tags: Peregrine, monolithic 100W power limiter

Samsung Starts Mass Producing Industry's First 10-Nanometer Class DRAM

Sep 29, 2016

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and ...

Tags: Samsung, 10nm-class DRAM, DDR4

Skyworks Launches Wi-Fi, Bluetooth, Zigbee RF Switches

Aug 30, 2016

Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched two new Wi-Fi switches suitable for WLAN networks, repeaters, ISM-band radios, Bluetooth systems, smartphones, and ...

Tags: Skyworks, Wi-Fi switches, SPDT

Custom MMIC ADDs Broadrange Distributed Amplifiers with Positive Gain Slope

Jun 30, 2016

Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added two new gallium arsenide (GaAs) MMIC BroadRange distributed amplifiers to its portfolio, for applications for including military/commercial ...

Tags: Custom MMIC, GaAs, monolithic microwave

MACOM Adds 4W Packaged Linear Power Amplifiers for 7 and 8GHz Point-to-Point Radio Cellular Backhaul

Jun 21, 2016

MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched two packaged linear power amplifiers ...

Tags: MACOM, power amplifiers

VisIc Launches 650V Half-Bridge Evaluation Board

Apr 15, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...

Tags: GaN-on-Si power transistor

EPC Offers 15MHz Half-Bridge Development Boards Using eGaN FET Synchronous Bootstrap Augmented Gate Drive

Apr 5, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...

Tags: EPC E-mode GaN FETs GaN-on-Si

Riversimple Unveils Hydrogen Fuel Cell Powered Car

Feb 18, 2016

Riversimple, a UK based startup has unveiled a hydrogen-powered car called Rasa which claimed to offer 300 miles driving range on 1.5kg of hydrogen. The company has been building hydrogen fuel-cell project for 15 years and now plans to ...

Tags: Fuel Cell, electricity Car

China Develops New Super Capacitors

Dec 29, 2015

China's largest rolling stock manufacturer CRRC Corp. has developed a new generation of super graphene capacitors that can power electric buses with higher efficiency and for a longer period. The train maker has produced two types of ...

Tags: New Super Capacitors

American Bright Releases New LED AC Modules to Lower Fixture Cost

Nov 25, 2015

American Bright Optoelectronics Corp. today released the Ingeni-AC family of linear form factor direct AC LED modules that eliminate the need for costly external AC to DC conversion and both speeds total development time while radically ...

Tags: LED fixture, linear lights, residential lighting

Tokyo Institute of Technology Researchers Unravel Ferroelectric Properties in HfO2 Thin Films

Nov 12, 2015

Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute of Technology ...

Tags: Ferroelectric materials, HfO2 Thin Films

GaN Systems' Launches Half-Bridge Evaluation Board for GaN Transistor Circuit Design

Nov 9, 2015

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...

Tags: GaN Transistor Circuit, power switching semiconductors

Regions of Origin for Exported Chinese Products

Sep 18, 2015

Regions of Origin for Exported Chinese Products in 2014 HS Code Product 2014 Export Sales (USD) YoY Ratio 8517 Electric app for line telephony,incl ...

Tags: alloy steel, hollow drill bars

High-Pressure Anneal for Indium Gallium Arsenide Transistors

Aug 10, 2015

Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...

Tags: Transistors, capacitors

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