Chromium articles & resources on Made-in-China.com

I Holland to Exhibit New Tablet Tool Coating at Interphex Japan Event

Mar 27, 2017

I Holland is set to exhibit new PharmaCote ECxtra tablet tool coating at this year’s Interphex Japan event, which is scheduled to be held from 28 to 30 June. The new tool coating has been developed to protect tablet punches from ...

Tags: I Holland, tablet

Electrically Driven Single-Photon Emission From Atomically Thin Diodes

Oct 12, 2016

The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...

Tags: single-photon emission devices, hBN

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Onchip Offers Thin-Film Wafer Backside Metallization of Solderable Die-Attach Metal Stacks

Jun 20, 2016

Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...

Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

Mar 15, 2016

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Tsurumi To Introduce Its Strongest Performing Dewatering Model At Bauma 2016

Mar 11, 2016

The LH4110W high-pressure pump has a height of over 1.8 m and a net weight of around 1.3 tonnes. The LH pumps water with particles up to 8 mm in diameter vertically upwards, reaching up to 216 m. "This is the strongest performing pump of ...

Tags: Tsurumi, Dewatering Model, Bauma 2016

Hybrid Growth of Gallium Nitride Tunnel Junctions

Feb 14, 2016

University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...

Tags: Gallium Nitride Tunnel, Hybrid

a Transport Revolution Is Coming

Nov 27, 2015

Researchers led by a team at UNSW Australia have used the Australian Synchrotron to turn the discovery of an ultra-low density and corrosion-resistant magnesium alloy into the first step toward mass-producing ‘stainless ...

Tags: stainless magnesium, cars, trucks

High-Performance Gallium Nitride on Low-Resistance Silicon

Aug 31, 2015

University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...

Tags: RF signals, high resistance silicon

A 42% Enhancement in Light Output From Flip-Chip Ingan LEDs

Jan 8, 2015

Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...

Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical

InGaN LEDs with Thicker Active Regions Enabled by on The Semi-Polar (30-3-1) Plane

Nov 13, 2014

University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...

Tags: Thicker InGaN, Semi-Polar Substrate

USN Has Announced The Launch of Its First Diet Fuel Protein Soup

Oct 8, 2014

USN has announced the launch of its first Diet Fuel Protein Soup. A new addition to the Diet Range, the USN Diet Fuel Protein Soup has a delicious meal replacement formula with whey and soy protein which provides dieters with a complete, ...

Tags: USN, Diet Fuel Protein Soup, Food

Chromium

Related Products