20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
In the presence of Flemish Minister Ingrid Lieten and Limburg Governor Herman Reynders,EpiGaN nv of Hasselt,Belgium has officially opened its new production site in Research Campus Hasselt(RCH)as the location for volume production of its ...
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors