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Monolith Makes Availability 1200V SiC Schottky Engineering Samples

Oct 12, 2016

Monolith Semiconductor Inc of Round Rock, TX, USA has announced the availability of engineering samples of 1200V, 5A and 10A silicon carbide (SiC) Schottky diodes in a TO-220 package. Manufactured in the 150mm SiC foundry of X-FAB Texas, ...

Tags: Monolith Semiconductor Inc, 1200V SiC Schottky

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Kyma and Quora Partner on GaN Substrate Materials

Jun 23, 2016

Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...

Tags: Kyma technologies, GaN, Quora

CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales

Apr 19, 2016

Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...

Tags: CISSOID SiC power MOSFET SiC Schottkys

Power Electronics MOCVD Market Growing at 40% CAGR to Over $205m in 2019

Feb 12, 2016

The global metal-organic chemical vapor phase deposition (MOCVD) market for power electronics is will rise at a striking compound annual growth rate (CAGR) of over 40% to more than $205m in 2019, according to the report 'Global MOCVD Market ...

Tags: MOCVD, Power electronics

EVG Sees Power Device and RF Applications Driving Demand for Wafer Bonding Solutions for Engineered Substrates

Dec 21, 2015

EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) says that over the past year it has seen a significant increase in demand for its wafer bonding ...

Tags: EV Group Engineered substrates Power electronics

EPC Publishes Second Edition of Wireless Power Handbook

Dec 16, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...

Tags: EPC, E-mode GaN FETs

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Palladio and E Ink Launch New Pharma Packaging Solution with Sensors

Oct 15, 2015

Pharmaceutical packaging provider Palladio Group and electronic ink technology company E Ink have launched PhutureMed, a new pharmaceutical packaging solution. The new PhutureMed pack comes with E Ink display and sensors that will ...

Tags: Palladio, E Ink, Pharma Packaging, folding cartons, labels

Cree Co-founder on RF and Power Business New Brand Identity and Market Trends

Oct 14, 2015

Leading U.S. LED manufacturer Cree announced earlier this month, it will be rebranding its power and RF business as Wolfspeed. In an exclusive interview with LEDinside analyst and assistant manager Joanne Wu, Cree co-founder and CTO John ...

Tags: Cree, Wolfspeed, RF and power business, Market Branding

US Air Force Awards Cree's Power and RF Division $4.1m Contract Extension

Sep 14, 2015

The US Air Force has awarded Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, a $4.1m follow-on contract, enabling qualification of a high-performance power ...

Tags: GaN wafers, SiC

Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits

Aug 10, 2015

Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...

Tags: GaN Transistors, Power Electronic Circuits

Exagan Raised €5.7m to Produce High-Speed Power Switching Devices on 200mm Wafers

Jun 25, 2015

Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...

Tags: GaN-on-Si, GaN switching device

Coventry Is Participating in a £9.5m Government Initiative

May 14, 2015

Anvil Semiconductors Ltd of Coventry, UK is participating in a £9.5m government initiative to modernize the UK energy infrastructure to cope with the unprecedented change in energy consumption, generation and distribution. UK ...

Tags: SiC-on-Si substrates, power devices

Cambridge University Chooses Veeco's Propel MOCVD System

Apr 21, 2015

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...

Tags: GaN-on-Si, Power Electronics, LEDs

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