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AXT Completes Purchase of New Manufacturing Facility in Dingxing, China
Sep 13, 2017AXT Inc of Fremont, CA, USA - which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has completed the purchase of its new manufacturing facility in the city of Dingxing, China. ...
Tags: gallium arsenide, indium phosphide
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Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission
Aug 19, 2016Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch
Mar 30, 2016Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
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Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate
Mar 15, 2016Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
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Low-Threshold Yellow Laser Diodes
Dec 21, 2015Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics
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NREL and University of California Santa Barbara Have Developed a Wafer Bonding Technology
Jul 17, 2015The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...
Tags: electronic components, semiconductor, TCO IZO Tandem solar cells
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Solar Junction to Become a Provider of Solar Cells for Space Power Applications
Jun 16, 2015Solar Junction Corp (SJC) of San Jose, CA, USA, which makes what are reckoned to be the highest-efficiency commercially available multi-junction solar cells for terrestrial concentrated photovoltaic (CPV) applications, has announced plans ...
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Hanergy Sets up 10MW Plant in Wuhan
Apr 21, 2015China-based Hanergy Thin Film Power Group Ltd and the Huangpi District People's Government in Wuhan City have entered into an investment cooperation agreement to construct a gallium arsenide (GaAs) thin-film solar cell R&D and manufacturing ...
Tags: Solar Cells, gallium arsenide
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UCLA Developed Gallium Antimonide Thermophotovoltaic Cells
Apr 7, 2015University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
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This Fundamentally Changes The Utility of Small Unmanned Systems in a Number of End Market
Oct 17, 2014Alta Devices of Sunnyvale, CA, USA (a Hanergy Holdings company) has announced a cooperation with Airware to enable manufacturers of small unmanned aerial vehicles (UAV) to integrate solar power into their aircraft. Founded in 2007, Alta ...
Tags: Alta Devices, GaAs, PV Hanergy
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GaAs Bulk Substrate Manufacturers Saw Both Production and Revenues Decline
Aug 20, 2014Despite strong growth in the gallium arsenide device market, GaAs bulk substrate manufacturers saw both production and revenues decline for the second consecutive year, according to the Strategy Analytics Advanced Semiconductor Applications ...
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Hanergy Has Completed The Acquisition of Alta Devices of Santa Clara
Aug 15, 2014Beijing-based clean-energy power generating firm Hanergy Holding Group Ltd (parent of thin-film photovoltaic module maker Hanergy Solar) has completed the acquisition of Alta Devices of Santa Clara, CA, USA. Founded in 2007, Alta is a ...
Tags: Alta Devices, PV, Hanergy, Electronics
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AXT Has Reported Revenue of $19.3m
May 1, 2014For first-quarter 2014, AXT Inc of Fremont, CA, USA has reported revenue of $19.3m, up 3.8% on $18.6m last quarter although still down 13.8% on $22.4m a year ago. Fiscal Q1/2013 Q2/2013 Q3/2013 Q4/2013 Q1/2014 Revenue $22.4m $23.8m $20.5m ...
Tags: Electrical, Electronics
