The US Naval Research Laboratory (NRL) has demonstrated the ability to grow thin films of the transition-metal nitride Nb2N (niobium nitride). The thin crystalline material has a similar structure to gallium nitride (GaN), but its ...
Tags: Thin-Film Niobium Nitride, LED
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The UK’s University of Cambridge has opened a new £1m facility for growing gallium nitride that aims to enable researchers to expand and accelerate their work, which promises to further reduce the cost and improve the efficiency ...
Tags: LED lights, LED, lights
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
Dynax Semiconductor Inc. of China has placed its first purchase order for an AIXTRON Close Coupled Showerhead (CCS) CRIUS MOCVD system aimed at production of nitride semiconductor electronic devices. It will be the first system in China ...