GaN devices articles & resources on Made-in-China.com

Qorvo Launches Dual-Transistor GaN-on-Sic Asymmetric Doherty Amplifier Module for Macro Base-Stations

Aug 14, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...

Tags: Qorvo, GaN, RF, GaN-on-SiC

Picosun Collaborating with Taiwan's NCTU and Atom Semicon on ALD

Jul 7, 2017

Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...

Tags: GaN devices, Electro-Optical Engineering

Mitsubishi Electric and Nanosemi to Demo Ultra-Wide-Band Linearized Doherty Amplifier for Next-GeN Lte Base Stations

May 24, 2017

In booth 1827 at the IEEE MTT-S International Microwave Symposium (IMS2017) in Honolulu, Hawaii (6-8 June), Mitsubishi Electric US Inc of Cypress, CA is presenting a hands-on mini lab showcasing its high-efficiency, wide-band gallium ...

Tags: Mitsubishi, Electric

PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product

Apr 25, 2017

Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...

Tags: PowerAmerica, GaN products

VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver

Sep 20, 2016

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...

Tags: ECCE2016, VisIC Technologies, MISHEMTs

VisIC Launches Low-Rds(on) 650v GaN Switch Product Line in Bottom-Side-Cooled Package for Switching up to 12A

Sep 9, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...

Tags: VisIC, MISHEMTs, new 650V GaN power switch

Consumer Electronics Chargers to Comprise 30% of GaN Market in 2022

Sep 9, 2016

The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...

Tags: GaN power devices, Dialog Semiconductor plc

GaN Device Supply Chain Remains Robust Despite Consolidation

Aug 30, 2016

Even with the well-publicized consolidation of RF Micro Devices and TriQuint Semiconductor, Infineon's acquisition of International Rectifier (IR) and most-recently Wolfspeed, and NXP Semiconductors' acquisition of Freescale Semiconductor, ...

Tags: GaN, Micro Devices, Semiconductor

Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer

Aug 10, 2016

Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...

Tags: GaN, HVPE, free-standing wafers

VisIC Launches New Generation of Low-Rdson ALL-Switch 650v GaN Devices Usable with Standard Drivers

Jun 7, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...

Tags: GaN-on-Si, power transistor

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments

Apr 15, 2016

Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...

Tags: Wolfspeed, Harsh Space Environments

VisIc Launches 650V Half-Bridge Evaluation Board

Apr 15, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...

Tags: GaN-on-Si power transistor

Freebird Partners with EPC to Develop Radiation-Hardened GaN Power Conversion Systems for Satellite and Harsh-Environment Applications

Apr 15, 2016

Freebird Semiconductor Corp of North Andover, MA, USA, which manufactures high-reliability gallium nitride (GaN) high-electron-mobility transistor (HEMT) products for power semiconductor technologies in the commercial space-flight ...

Tags: EPC E-mode GaN FETs GaN-on-Si

GE Aviation Receives $2.1m US Army Contract To Develop SiC Power Electronics

Mar 21, 2016

GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...

Tags: GE Aviation, SiC power devices

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