GaN power articles & resources on Made-in-China.com

Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets

Aug 27, 2018

Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...

Tags: integrated passive device, filters

Veeco Reports Higher-Than-Expected Q2 Profits, Despite Falling Revenue From Sales of Blue LED MOCVD Systems to China

Aug 8, 2018

For second-quarter 2018, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $157.8m, down slightly on $158.6m last quarter but up 40.6% on $112.2m a year ago. ...

Tags: Veeco, LED

TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers

Mar 7, 2018

Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...

Tags: GaN Power, GaN FET Drivers

Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

EPC Launches High-Efficiency Half-Bridge Development Board Operating up to 10MHz for Point-of-Load DC-DC Conversion

Oct 20, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...

Tags: gallium nitride, integrated circuits

GaN Systems Launches Evaluation Board Combining GaN Power Transistors with Peregrine's E-Hemt Drivers

Oct 20, 2017

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...

Tags: GaN Systems, integrated circuits

Navitas' GaN Power Ics Enable Smallest 65W USB-PD Laptop Adapter

Sep 21, 2017

To keep pace with the dramatic size and weight reductions in laptop designs over the last 10 years, Navitas Semiconductor Inc of El Segundo, CA, USA has launched what it claims is the smallest 65W USB-PD (Type C) adapter reference design. ...

Tags: GaN Power, Laptop Adapter

Navitas Chosen by Poweramerica to Enable High-Efficiency, High-Density Mobile Fast Chargers

Sep 4, 2017

PowerAmerica — a manufacturing institute consisting of public and private partners from the semiconductor industry, the US Department of Energy (DoE), national laboratories and academia — in early August selected Navitas ...

Tags: PowerAmerica, Fast Chargers

Navitas Partners with Asian Distributors to Accelerate GaN Power IC Adoption

Jun 29, 2017

Navitas Semiconductor Inc of El Segundo, CA, USA has expanded its support in Asia by entering two new distribution partnerships for its gallium nitride (GaN) power ICs. By partnering with Myland Technologies Inc and Allied Group (HK) Ltd, ...

Tags: GaN Power, IC Adoption

TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics

Jun 29, 2017

Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...

Tags: GaN Inverter, AC Servo Drives

Navitas Issues 150W AC-DC GaN Power IC Reference Design

Jun 2, 2017

Navitas Semiconductor Inc of El Segundo, CA, USA has announced the availability of a 150W AC-DC reference design utilizing its gallium nitride (GaN) power ICs. With a power density of more than 21W/inches3 and efficiency of more than 95%, ...

Tags: LED TV, laptop adapter

Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

Mitsubishi Electric and Nanosemi to Demo Ultra-Wide-Band Linearized Doherty Amplifier for Next-GeN Lte Base Stations

May 24, 2017

In booth 1827 at the IEEE MTT-S International Microwave Symposium (IMS2017) in Honolulu, Hawaii (6-8 June), Mitsubishi Electric US Inc of Cypress, CA is presenting a hands-on mini lab showcasing its high-efficiency, wide-band gallium ...

Tags: Mitsubishi, Electric

Custom Mmic Boots Passive Mixer Linearity by Using Gan Rather Than GaAs

Apr 27, 2017

Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has announced a new technical brief detailing its progress in boosting linearity by using passive MMIC mixers based on gallium nitride (GaN) technology. ...

Tags: Custom MMIC, MMIC mixers

VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver

Sep 20, 2016

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...

Tags: ECCE2016, VisIC Technologies, MISHEMTs

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