GaN power electronics articles & resources on Made-in-China.com

Beryllium Doping of Gallium Nitride Shown to Offer Promise for Higher Efficiency in Power Electronics

Nov 15, 2017

Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...

Tags: GaN Power electronics

Navitas Launches First GaN Power ICs

Mar 21, 2016

Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...

Tags: GaN, Power electronics

Building Components for GaN Power Switches

Dec 18, 2015

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...

Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting

Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits

Aug 10, 2015

Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...

Tags: GaN Transistors, Power Electronic Circuits

Cambridge University Chooses Veeco's Propel MOCVD System

Apr 21, 2015

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...

Tags: GaN-on-Si, Power Electronics, LEDs

Epitaxial Deposition and Process Equipment Maker Veeco Instruments Inc of Plainview

Nov 21, 2014

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...

Tags: metal-organic chemical vapor deposition system

GaN-on-Sapphire Is The Existing Mainstream Technology for LED Manufacturing

Mar 24, 2014

Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...

Tags: GaN-on-Si, GaN power electronics, LED

Soraa Has Been Awarded Several Million Dollars in Funding

Nov 19, 2013

Soraa, the world leader in the development of GaN on GaN™ LED technology, announced that it has been awarded several million dollars in funding by U.S. Department of Energy’s Advanced Research Projects Agency - Energy (ARPA-E) ...

Tags: Soraa, GaN Substrates

European Program Aimed at Developing a Cost-Effective and Reliable Technology

May 21, 2013

LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...

Tags: SiC, substrates GaN

Device Market Is Expected to Reach $12.6m by The End of 2012

Jul 13, 2012

The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...

Tags: Raw material, GaN

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