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Gallium Arsenide Substrate
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Fangliang Gao and Guoqiang Li Plan to Grow High-Quality Indium Gallium Arsenide
Apr 3, 2014Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
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AXT Has Reported up 4.5% on $22.4m Last Quarter.
Aug 9, 2013For second-quarter 2013, AXT Inc of Fremont, CA, USA has reported revenue of $23.8m, down 5.5% on $25.2m a year ago but up 4.5% on $22.4m last quarter. "Our results for the second quarter came in within our guidance range, with revenue ...
Tags: AXT GaAs GaAs substrate InP Germanium, Electrical, Electronics
