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EpiGan Showcasing GaN Epiwafer Solutions for 5G
Aug 31, 2018In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...
Tags: GaN Epiwafer, epitaxial wafer
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Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets
Aug 27, 2018Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...
Tags: integrated passive device, filters
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GaN Systems Launches Evaluation Board Combining GaN Power Transistors with Peregrine's E-Hemt Drivers
Oct 20, 2017GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...
Tags: GaN Systems, integrated circuits
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Mitsubishi Electric Launching Ka-Band GaN-Hemt Mmic to Downsize Satellite Earth-Station Power Transmitters
Oct 10, 2017Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...
Tags: Power Transmitters, Mitsubishi
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Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W
Aug 28, 2017Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
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Picosun Collaborating with Taiwan's NCTU and Atom Semicon on ALD
Jul 7, 2017Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...
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PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product
Apr 25, 2017Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
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Mitsubishi Electric Expanding Ku-Band GaN HEMT Range to 70W and 100W to Shrink Satellite Earth Stations
Sep 29, 2016Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
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Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT
Sep 23, 2016In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
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VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver
Sep 20, 2016At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
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Advantech Wireless Releases Second-Generation GaN-Based 125-200w Ka-Band SSPA/BUC
Sep 13, 2016Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched its second-generation gallium nitride (GaN)-based 125-200W Ka-band UltraLinear solid-state power amplifier/block ...
Tags: GaN, HEMT, Advantech Wireless, SSPA/BUC
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MACOM Showcasing Dc-100ghz MMICs atEuMW
Sep 9, 2016In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
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Mitsubishi Electric Sampling 220w GaN-HEMT for 2.6ghz-Band 4g Base Transceiver Stations
Sep 6, 2016Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
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EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor
Aug 31, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
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EpiGaN Nominated for Eu Innovation Radar Prize
Aug 17, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
