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HVPE
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Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer
Aug 10, 2016Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
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Sodium Flux Route to Free-Standing Gallium Nitride Substrates
Jul 19, 2016Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
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Correcting Charge Polarization Calculations for III-Nitrides
Jul 7, 2016Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
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Ultraviolet Photodetectors on Free-Standing Gallium Nitride
Dec 2, 2015Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
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SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
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KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon
Jun 16, 2015KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
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265nm-Wavelength LEDs Is More Powerful and Efficient
Apr 22, 2015Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
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Epiluvac's Epi-1000X Silicon Carbide Reactor
Jan 15, 2015Epiluvac AB of Lund, Sweden has received an order for its EPI-1000X silicon carbide (SiC) reactor from a “leading European research center”. Installation and commissioning of the system will be completed during first-quarter ...
Tags: gas flows, heating system, Electrical
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UCSB And NTU Have Been Optimizing Ammonia-Based MBE for GaN Growth
Jun 13, 2014University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...
Tags: GaN MBE Veeco, Electrical, Electronics
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Ammono S.A. Conceived Proprietary New Technology
Apr 3, 2014Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
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GT Has Acquired Exclusive Rights From Kyma Technologies Inc of Raleigh
Feb 24, 2014GT Advanced Technologies Inc of Nashua, NH, USA (a provider of polysilicon production technology as well as sapphire and silicon crystal growth systems and materials for the solar, LED and electronics markets) has acquired exclusive rights ...
Tags: LED Wafer Production, epiwafers
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Ammono S.A. Is Partnering with Kyma Technologies Inc of Raleigh
Jan 24, 2014Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...
Tags: efficiency of power electronics, semiconductor materials
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Researchers Produced High-Quality Free-Standing Gallium Nitride Substrates
Dec 10, 2013Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
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UCSB Have Been Developing Indium Gallium Nitride Solar Cell Structures
Nov 26, 2013University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
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Gt Announced That It Has Entered Into a Multi-Year Supply Agreement with Apple
Nov 7, 2013The company also announced that it has entered into a multi-year supply agreement with Apple Inc. to provide sapphire material. GT will own and operate ASF® furnaces and related equipment to produce the material at an Apple facility in ...
Tags: Apple, Sapphire Materials
