IGBT articles & resources on Made-in-China.com

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

TSMC Profits From Surging Market Demand for Chips in Auto Application

Oct 9, 2017

Market insiders noted that TSMC (Taiwan Semiconductor Manufacturing Co.), the world's largest semiconductor foundry headquartered in Taiwan, will see a strong revenue performance as the firm won massive orders from multinational ...

Tags: TSMC, semiconductor

Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch

Oct 12, 2016

Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...

Tags: NCSU, Low-Cost SiC High-Voltage Switch

AgileSwitch to Be Awarded Patent for Augmented Turn-off SiC Module Switching Technique

Oct 12, 2016

AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...

Tags: SiC MOSFET, AgileSwitch LLC

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Wolfspeed Launches All-SiC Half-Bridge Power Module & Gate Driver Combination

May 11, 2016

In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...

Tags: Power Module, Gate Driver

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

Apr 21, 2016

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

China to Spur Power Device Developments in 2016

Mar 24, 2016

Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...

Tags: AC driver, railway applications, high power

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Dec 2, 2015

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

Firecomms Adds 5MB Redlink Optical Receivers with Temperature Range Extended to 95°C for Industrial Applications

Nov 24, 2015

Firecomms Ltd of Cork, Ireland and Tongxiang, China (which manufactures fiber-optic solutions and optical transceivers for communications networks) has launched a range of 5Mb RedLink fiber optic receivers with an extended temperature ...

Tags: Firecomms, Optical transceivers, IGBT driver

Infineon Extends Lead in Power Semiconductor Market

Sep 16, 2015

Infineon Technologies AG of Munich, Germany says that is the market leader in power semiconductors for the twelfth consecutive time. Following the firm's acquisition of International Rectifier at the beginning of 2015, Infineon has a market ...

Tags: power semiconductors, Electronics

Increasing Carrier Lifetimes for High-Voltage Silicon Carbide

Sep 15, 2015

Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...

Tags: Silicon Carbide, Electric Power Industry

Silicon Carbide Chip Business Was Worth More Than $133m

Aug 4, 2015

According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...

Tags: SiC Market, power electronics

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