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InAlGaN HEMT SiC MOCVD MBE
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IQE Claimed Record-Breaking Balanced Frequency Performance for a Nitride Semiconductor
Feb 17, 2013University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...