Osram Opto Semiconductors GmbH of Regensburg, Germany has succeeded in reducing the typical forward voltage by about 600mV to 2.6V (at a power density of 45A/cm2) in its indium gallium nitride (InGaN)-based green direct-emitting LEDs. With ...
Tags: Osram, Green LEDs
Despite revolutionizing illumination, even top-of-the-line nitride LEDs are far from their maximum efficiency when operating at the high power needed for lighting applications. Logan Williams and Emmanouil Kioupakis at the University of ...
Tags: LEDs, LED Efficiency
The Optoelectronics group of Vishay Intertechnology Inc of Malvern, PA, USA has launched a new series of true green LEDs in a compact surface-mount 0603 ChipLED package. Measuring 1.6mm by 0.8mm with an ultra-thin 0.55mm profile, the ...
Tags: ChipLED Package, package
Regarding the performance of LED industry in Taiwan, due to low season, demand for InGan (blue) LEDs has dropped in the first quarter, while that of AlINGap (red) LEDs is still strong. Thus, institutional investors estimate that business ...
Tags: LED industry, LED chips
As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...
LED display can be categorized into indoor display, outdoor display and semi-outdoor display. The main clients are business owners. Displays are mainly used in public space for videos advertisements, posters display. Applications of such ...
Tags: Micro LED, LED Display
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Vishay Intertechnology Inc of Malvern, PA, USA has expanded its offering of mid-power UV LEDs in the 365nm wavelength range with a new device featuring a silicone lens in a compact 1.6mm by 1.6mm by 1.4mm surface-mount package. Designed to ...
LED maker Kingbright Co LLC City of Industry, CA, USA has launched what it claims is the industry's smallest SMD LED, the HELI-UM series. The 0.65mm x 0.35mm x 0.20mm (0201) footprint of the HELI-UltraMiniature allows it to fit into ...