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LED heterostructure
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Tantalum Barrier Reduces Gallium Phosphide Contact Resistance
Mar 9, 2016Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...
Tags: AlGalnP, Tantalum barrier, LED
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China Engineered Gallium Vacancy Defects in Gan to Create Color Tunable Emitting Diodes
Oct 14, 2014Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure