On 31 March, South Korean LED maker Seoul Semiconductor Co Ltd (SSC) filed a patent infringement lawsuit in Germany in the District Court of Düsseldorf against global electronic component distributor Mouser Electronics Inc asserting ...
Tags: Semiconductor, LEDs
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Chien-Chung Lin, Huang-Yu Lin, Kuo-Ju Chen, Sheng-Wen Wang, Kuan-Yu Wang, Jie-Ru Li, Huang-Ming Chen and Hao-Chung Kuo The use of distributed Bragg reflectors in remote-phosphor white-LED packaging significantly improves luminous ...
Tags: White LED Packaging
In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
British electronica trio Years and Years are touring summer festivals and venues with an ingenious bespoke LED strip screen mapped by an Avolites Ai Infinity EX8 server. The concept for the LED screen was the idea of Years and Years ...
Tags: LED strip screen, LED Backdrop
Plessey today announced the release of its range of MaGIC™ LED die, manufactured on the company’s patented GaN-on-Silicon technology. The blue die, sometimes referred to as blue pump for their ability to pump phosphor to a white ...
Tags: Plessey, LED die, LED lighting
Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...
Tags: Fukuda Crystal Lab, a diameter, Electrical
Taiwan's National Tsing Hua University has claimed the highest optical 3dB modulation bandwidth of ~463MHz at 50mA for a 500nm-wavelength blue-green indium gallium nitride (InGaN) LED [Chien-Lan Liao et al, IEEE Electron Device Letters, ...
Tags: blue-green LEDs, taiwan, LED, LED light, Electrical, Electronics
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
Japan’s Tottori University has produced blue-green light-emitting diode (LED) structures using zinc sulfide telluride (ZnSTe) material [Kunio Ichino et al, Appl. Phys. Express, vol6, p112102, 2013]. The researchers see their work as ...
Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
LG Electronics Materials and Components Laboratory in South Korea has used aluminium gallium nitride (AlGaN) superlattice structures (SLs) to improve lateral current spreading from the n-side of nitride semiconductor light-emitting diodes ...
Tags: Nitride LEDs, Light
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
The patent-pending LED creates a more precise wavelength of UV light than today's commercially available UV LEDs, and runs at much lower voltages and is more compact than other experimental methods for creating precise wavelength UV light. ...
Tags: Ultraviolet LED