Lattice articles & resources on Made-in-China.com

The Future of Transforming Lighting Technology

Feb 1, 2019

An international research team led by the Georgia Institute of Technology illustrates the potential of next-generation semiconducting materials in transforming lighting technology. . Researchers have found out that the quantum particles ...

Tags: Hybrid Semiconductor, Lighting

EpiGan Showcasing GaN Epiwafer Solutions for 5G

Aug 31, 2018

In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...

Tags: GaN Epiwafer, epitaxial wafer

University of Michigan Predicts Incorporating Boron in Ingan Increases LED Efficiency at High Power

Nov 24, 2017

Despite revolutionizing illumination, even top-of-the-line nitride LEDs are far from their maximum efficiency when operating at the high power needed for lighting applications. Logan Williams and Emmanouil Kioupakis at the University of ...

Tags: LEDs, LED Efficiency

Beryllium Doping of Gallium Nitride Shown to Offer Promise for Higher Efficiency in Power Electronics

Nov 15, 2017

Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...

Tags: GaN Power electronics

China's Launches First Automotive Lighting Plant

Nov 16, 2016

Jiangxi Luye Auto Lighting launched the first automotive lighting LED module plant in Nanchang Optical Valley in China, reported Xinhua. The LED automotive module manufacturing facility values RMB 500 million (US $72.97 million) in total, ...

Tags: Auto Lighting, LED Lighting

Berkeley Lab-LED Team Fabricates Transistor with Record 1nm-Long Gate

Oct 12, 2016

A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...

Tags: Berkeley Lab, transistor with record 1nm-long gate

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Gallium Arsenide Phosphide Solar Cells on Silicon with Record 12% Efficiency

Aug 26, 2016

Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...

Tags: GaAsP solar cells, GaAsP, MBE, MOCVD

Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission

Aug 19, 2016

Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...

Tags: ELO, GaAs, InGaAlP

NSF Grants $2m to Project to Fabricate Chip-Scale Integrated Sic Quantum Photonic Processors

Aug 12, 2016

Under a four-year, $2m grant from the US National Science Foundation (NSF), Qiang Lin, assistant professor of electrical and computer engineering in the University of Rochester's Hajim School of Engineering & Applied Sciences, will lead a ...

Tags: SiC Quantum computing

Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer

Aug 10, 2016

Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...

Tags: GaN, HVPE, free-standing wafers

LayTec Adds Nanoscale SPC for Quaternary Films to Epinet 2016 Analysis Software

Jul 27, 2016

In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...

Tags: metrology system, x-ray diffraction

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