RMS articles & resources on Made-in-China.com

Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission

Aug 19, 2016

Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...

Tags: ELO, GaAs, InGaAlP

Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas

Jun 20, 2016

Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...

Tags: InGaN, AFM, MOCVD

Rotoflex Expands Portfolio with New HSI Slitter Rewinder

Nov 26, 2015

Packaging machinery firm Rotoflex has expanded its product range with the introduction of a new HSI slitter rewinder. Designed for high volume label slitting, inspection and rewinding, the horizontal slitter rewinder is claimed to offer ...

Tags: Rotoflex, HSI Slitter Rewinder, label

Trinamic Motion Control Announces Its Motor Control and Driver IC

Jul 15, 2015

Global developer of motor and motion control technologies Trinamic Motion Control has announced its latest single-axis stepper motor control and driver IC. The TMC2100, with integrated MOSFETs to drive RMS motor current to 1.2A, is ...

Tags: auto accessories, motorcycle parts, driver IC, motor control

II-VI Suwtech Is Introducing a HPLN Laser and a HPFC Laser

Jun 19, 2015

In hall B1 (booth 403) at Laser World of Photonics 2015 in Munich, Germany (22-25 June), II-VI Suwtech of Shanghai, China – a subsidiary of engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA ...

Tags: Laser diodes, Electronics

Germany Developed GaN HEMTs on Sic Layers on Silicon Wafers

Jan 5, 2015

Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...

Tags: Cubic Silicon Carbide, Electrical

Discovery Has Signed Partnerships with DGL and RMS to Develop New Toy Lines

Nov 11, 2014

DGL and RMS to produce toys, games, puzzles and more. Discovery Consumer Products has signed partnerships with DGL and RMS to develop new toy lines for its Discovery Kids brand. DGL will develop a new line of toys and games featuring ...

Tags: puzzles, games, toys

NCSU Has Been Developing Homo-Epitaxy of Non-Polar AIN with a View to DUV

Oct 30, 2014

North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...

Tags: aluminium nitride, UV LED

Researchers in USA and Saudi Arabia Explored The Use of VdWE to Grow GaAs On Silicon

Sep 10, 2014

Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...

Tags: Graphene, Silicon

A Novel Ceramic-Functional-Particle-Filled Polymer Composite Material Has Been Developed

Aug 21, 2014

A novel ceramic-functional-particle-filled polymer composite material has been developed for the use either in discrete elements on the PCB or in being embedded within the packaging substrate for high-frequencyThe number of complete cycles ...

Tags: RF Capacitor, PCB

UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers

Aug 20, 2014

University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...

Aerovox Corp. Has Developed a Patent-Pending Technology

Aug 18, 2014

Aerovox Corp. has developed a patent-pending technology that increases the stability of polypropylene film capacitors in high temperature applications. The company’s new UltraTherm(TM) technology improves dielectricThe insulating ...

Tags: Aerovox, Electrical, Electronics

Avnet Has Announced It Now Stocks The Avx PA Flb Series Medium Power Film Capacitor

Aug 15, 2014

Avnet has announced it now stocks the AVX PA FLB Series medium power film capacitor. The capacitor uses a metallized polypropylene dielectricThe insulating material between the plates of the capacitor. The material is chosen for its ability ...

Tags: Avx, Electrical, Electronics

M/A-COM Launched a Wideband 6-Bit Digital Attenuator

May 20, 2014

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a wideband 6-bit digital attenuator that is ...

Tags: M/A-COM Digital, Electrical, Electronics, Semiconductors, Components

RMS

Related Products