Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
Toshiba International Corporation (TIC) has introduced the G2020 Series, its latest three-phase uninterruptible power system (UPS), in which silicon carbide (SiC) power modules in a three-level design enable 98%-efficient power protection ...
Tags: Toshiba SiC power modules, Electrical, Electronics, UPS
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH ...
Tags: Power Conversion, Cree
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, has submitted a draft registration statement on a confidential basis to the US Securities and Exchange Commission ...
Tags: silicon carbide, gallium nitride, LEDs
North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
Anvil Semiconductors Ltd of Coventry, UK is participating in a £9.5m government initiative to modernize the UK energy infrastructure to cope with the unprecedented change in energy consumption, generation and distribution. UK ...
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...
Tags: power products, silicon carbide
As part of its growth strategy to reach a broader set of customers, Global Power Technologies Group (GPTG) has announced an exclusive global distribution agreement with US-based Digi-Key Electronics, a provider of both prototype/design and ...
Tags: SiC Products, Electronics
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide ...