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Silicon Transistors
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NASA Studies Space Applications for GaN Crystals
Aug 20, 2018Two teams at the US National Aeronautics and Space Administration (NASA) Goddard Space Flight Center in Greenbelt, MD, USA are being funded to investigate the use of gallium nitride (GaN) to enhance space exploration. Engineer Jean-Marie ...
Tags: GaN transistors, GaN Crystal
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University of Wisconsin–Madison Claims First Carbon Nanotube Transistors to Outperform Silicon
Sep 7, 2016For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
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Purdue Develops SOI CMOS Power Amplifier for 5G Cell Phones and Next-Generation Radar
May 20, 2016A new highly efficient power amplifier (PA) based on silicon-on-insulator (SOI) CMOS could help to make possible next-generation cell phones, low-cost collision-avoidance radar for cars and lightweight microsatellites for communications, ...
Tags: Power Amplifier, Cell Phones
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Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits
Aug 10, 2015Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
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Dulles Announce Availability of a Gate Driver Evaluation Board
Nov 24, 2014Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
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Engineers Hope Carbon Nanotubes Offer a New Cooling Solution
Feb 11, 2014Computer chips used in next-generation smartphones and supercomputers can't get much faster without overheating.That's why engineers hope carbon nanotubes offer a possible cooling solution that could enable processing speeds to continue ...
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MoS2 Had an Edge as a Transistor Material
Jan 24, 2014When molybdenum disulfide (MoS2) entered the conversation related to two-dimensional (2-D) alternatives to graphene in electronic applications, some thought that MoS2 had an edge as a transistor material. That thought was inspired by the ...
Tags: MoS2, Nature Communication, semiconductor, CVD
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Mitsubishi Launched a Railcar Traction Inverter System
Dec 27, 2013Tokyo-based Mitsubishi Electric Corp has launched a railcar traction inverter system for 1500VDC catenaries that incorporates what is claimed to be the first all-silicon carbide (SiC) power modules made with SiC transistors and SiC diodes. ...
Tags: Mitsubishi Electric SiC power modules SiC, Electrical, Electronics
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Digi-Key Announced New Inventory of Gallium Nitride Power Management Products
Oct 12, 2013Global electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has announced new inventory of gallium nitride (GaN) power management products, available for immediate shipment as part of an exclusive global ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
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Fraunhofer Have Recently Achieved an Efficiency Level of 98%
Sep 13, 2013To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
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SEMATECH Claims That Researchers Have Made Significant Advances
Jul 8, 2013SEMATECH (the international research consortium of semiconductor device, equipment, and materials manufacturers) claims that researchers have made significant advances in post-epitaxial-growth backside clean processing that will prepare ...
Tags: Electrical, Electronics, semiconductor device, semiconductor
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IBM Has Found a Way to Make Transistors That Could Be Fashioned Into Virtual Circuitry
Mar 25, 2013In its efforts to explore methods of computing without silicon, IBM has found a way to make transistors that could be fashioned into virtual circuitry, mimicking the way in which the human brain operates. The proposed transistors would be ...
Tags: IBM, computer processors, computer
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GaN-Based Transistors Are Promising for Future High-Frequency/High-Power Devices
Mar 22, 2013The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
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IBM Has Found a Way to Make Transistors That Could Be Fashioned Into Virtual Circuitry
Mar 21, 2013Exploring methods of computing without silicon, IBM has found a way to make transistors that could be fashioned into virtual circuitry that mimics how the human brain operates. The proposed transistors would be made from strongly ...
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Transphorm Has Launched The Total GaN Family of Gallium Nitride on Silicon Transistors
Mar 18, 2013Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device
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