In a dramatic change from the status quo, nearly half of all gallium nitride (GaN) LEDs will be produced on silicon substrates by the end of the decade. That’s according to a new report by analysts at IHS, who forecast that the ...
Tags: LED Production, GaN LEDs, sapphire wafers
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...
Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...
Tags: Panasonic, GaN Power Transistor
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
LED epitaxial wafer and chip maker Epistar has developed silicon substrate applications for integrating power drivers on single-chip devices, with volumes of such devices being 75% smaller than those of conventional models, and the company ...
Tags: LED epitaxial wafer, Lights
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics
Epistar has invested NT$825 million (US$25.94 million) to merge with TSMC Solid State Lighting (SSL), helping to enhance Epistar's capability in the lighting industry. Before the decision was made, many companies such as SemiLEDs and ...
Tags: LED Market, LED technologies, Lights
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
UK-based Plessey has announced the realization of high-volume, large-die LED performance based on its gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) high-brightness LED (HBLED) technology. The large die benefits from ...
Tags: LED Technology, LEDs
Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
China's Nanjing University of Posts and Telecommunications has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon (Si) substrate by removing the substrate from the region under the device ...
Tags: Silicon wafer, Electrical, Electronics
LatticePower Corp of Nanchang, China, which claims to be the first company to commercialize GaN-on-silicon LED lighting, has announced an $80m initial round of Series D equity financing led by Asia Pacific Resources Development Investment ...
Tags: GaN-on-silicon, LED lighting
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors