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Raytheon Wins MDA Contract Modification to Transition AN/TPY-2 Radar Production From GaAs to GaN
Oct 12, 2016The US Missile Defense Agency has awarded Raytheon Company of Waltham, MA, USA a contract modification to develop a transition to production process to incorporate gallium nitride (GaN) components into existing and future AN/TPY-2 radars. ...
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DoD published final DFARS Rules1
Aug 15, 2014On May 6, 2014, the U.S. Department of Defense (DoD) published final DFARS (Defense Federal Acquisition Regulations System) rules1 to eliminate counterfeit parts from the supply chain by shifting the burden of protection onto contractors. ...
Tags: DoD, Electrical, Electronics
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AFRL/RX Has Completed a Program to Assess and Validate a Domestic Source
Jan 4, 2014A government and industry team led by engineers from the US Air Force Research Laboratory’s Materials and Manufacturing Directorate (AFRL/RX) has completed a program to assess, improve, refine and validate a domestic source of supply ...
Tags: Electrical, Electronics
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The Begining of The U.S. Brain
Jan 3, 2014Sometimes when I think of the human brain,the theme from"Star Trek"starts playing in my own head.It's the music of great unknowns—and in certain ways the human brain,with more connections between its cells than there are galaxies in ...
Tags: human brain, Brain Research
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AeroDef Manufacturing Summit and Exposition 2014 Announces Four Panel Discussions
Nov 25, 2013AeroDef Manufacturing Summit and Exposition 2014 announces four panel discussions focused on the most critical issues facing aerospace and defense manufacturing today as part of their Executive Insights Series. AeroDef Manufacturing takes ...
Tags: Executive Insights, AeroDef
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A Report Suggesting The Defense Agency Is Dumping BlackBerry Devices Was Inaccurate
Mar 21, 2013A U.S. Department of Defense spokesman on Thursday said a report suggesting the defense agency is dumping BlackBerry devices was inaccurate, and that BlackBerry is still part of ongoing DoD mobile device deployment plans. The spokesman ...
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IQE Claimed Record-Breaking Balanced Frequency Performance for a Nitride Semiconductor
Feb 17, 2013University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
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Notre Dame and Kopin Corp Have Developed High-Performance Nitride Semiconductor HEMTs
Jan 11, 2013Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
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Sp3 Has Been Awarded Two Patents by The US Patent and Trademark Office
Sep 27, 2012Sp3 Diamond Technologies Inc of Santa Clara,CA,USA,a supplier of chemical vapor deposition(CVD)diamond film products,equipment and services to markets including electronics,lasers,LEDs,semiconductors and MEMS,has been awarded two patents by ...
Tags: sp3 Diamond, CVD, CTE, US
