- Location
power device market
"-
SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019
Sep 27, 2017“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
-
Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
-
Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform
Aug 18, 2017Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...
Tags: Silicon Carbide, Pallidus
-
SiC Power Market Growing at CAGR of 19% to 2021 as It Spreads to More Applications
Jul 26, 2016When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
-
GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022
Feb 29, 2016The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...
Tags: GaN power devices
-
Silicon Carbide Chip Business Was Worth More Than $133m
Aug 4, 2015According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
-
Gan Power Device Market will Grow to Almost $600m
Jun 30, 2014Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting gallium nitride (GaN) in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated ...
Tags: Yole GaN HEMT Power electronics, Electrical, Electronics
-
GaN-on-Sapphire Is The Existing Mainstream Technology for LED Manufacturing
Mar 24, 2014Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED
-
Toshiba Is Expanding Its Family of 650V SiC Schottky Barrier Diodes
Oct 28, 2013With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The ...
Tags: Toshiba, SiC Schottky
-
The Future Development of The LED Lighting Market Is Optimistic
Jul 9, 2013According to "LED lighting Power Device Market Opportunity Report" IM Research recently released shows that the global LED lighting power market is expected to reach $ 10 billion by 2016, only the demand for power devices will reach ten ...
-
The Power Electronics Downturn in 2012 Was Quite Severe
May 29, 2013Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...
-
Toshiba Started Volume Production of SiC Power Devices
Apr 15, 2013In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo ...
Tags: SiC Power Devices, Toshiba
-
Germany Has Received Its First Purchase Order for a CCS CRIUS MOCVD System
Dec 11, 2012Deposition equipment maker Aixtron SE of Herzogenrath, Germany has received its first purchase order for a Close Coupled Showerhead (CCS) CRIUS MOCVD system from Dynax Semiconductor Inc of China. Aixtron says it will be the first system in ...
Tags: Aixtron, MOCVD, GaN electronic device, semiconductor, epitaxial layers
-
The Aixtron System Ordered by China Dynax Semiconductor Dedicated to Gan Electronics
Dec 10, 2012Dynax Semiconductor Inc. of China has placed its first purchase order for an AIXTRON Close Coupled Showerhead (CCS) CRIUS MOCVD system aimed at production of nitride semiconductor electronic devices. It will be the first system in China ...
-
Global and China Power Device Industry Report, 2011-2012underlines
Nov 29, 2012Global and China Power Device Industry Report, 2011-2012underlines: 1. power device; 2. global and China power device market; 3. power device industry; 4. IGBT, SiC and GaN market and industry outlook; 5. 18 power device players. ...
Tags: Power Device Industry Report, Power Device, power device market
