GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has released a new Application Note for design engineers that sets ...
Tags: Gan Systems, E-Mode Power, Switching Transistors, Electrical
Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor ...
Rudolph Technologies Inc of Flanders, NJ, USA, which provides defect inspection, packaging lithography, process control metrology and data analysis systems and software, has received multi-system orders from several customers for its latest ...
Deposition equipment maker Aixtron SE of Aachen, Germany says that Japanese manufacturer Showa Denko has qualified its most recent system for manufacturing silicon carbide (SiC) epitaxial wafers. The new AIX G5 WW (Warm-Wall) chemical vapor ...
Electrical test instrument and system provider Keithley Instruments Inc of Cleveland, OH, USA has introduced new enhancements to its parametric curve tracer (PTC) configurations that incorporate high-power SourceMeter source measure unit ...
Tags: Metal Foil, test instrument
The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...
Tags: Power Semiconductor, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...
Tags: Aixtron CVD SiC, Electrical, Electronics
Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...
Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm ...
The growing lighting end-market in 2014 is now projected to account for 35% of all packaged light-emitting diode (LED) dollars, according to a Research Note from Jamie Fox, principal analyst at market research firm IHS Inc. For the first ...
Tags: LED market, lighting end-market, LED
Wet-chemical equipment maker ClassOne Technology of Kalispell, MT, USA has launched its Solstice line of electroplating tools, designed specifically for the smaller-substrate users in emerging technologies such as MEMS, LEDs, power devices, ...
In respondse to external demand, Tokyo-based machinery manufacturer Mitsubishi Heavy Industries Ltd (MHI) has launched wafer bonding services using its wafer bonding systems, which have been developed in-house and are capable of bonding ...
Tags: Electrical, Electronics, machinery
Directed by Infineon Technologies AG together with partners Aixtron, SiCrystal AG and SMA Solar Technology AG, the three-year German project NeuLand (begun in late 2010) has developed highly integrated components and electronic circuits ...
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor