Covestro has expanded its film production capability, investing around €20m in a new production facility for multilayered flat films in Dormagen, Germany. The total investment also includes the related infrastructure and logistics. ...
Tags: Covestro, flat films
Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland has launched a delivery service for ALD precursor chemicals, implemented in cooperation with several well‐known chemical manufacturers. Picosun ...
Tags: ALD Tool, Precursors
Specialty metal and chemical products firm 5N Plus Inc of Montreal, Québec, Canada says that it intends to consolidate its operations at Wellingborough, UK with other sites within the group. In addition, in the USA, it will ...
Tags: 5N Plus, consolidating operations
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
Specialty metal and chemical products firm 5N Plus Inc of Montreal, Québec, Canada has appointed Arjang J. (AJ) Roshan as president & CEO, effective 15 February. He replaces Jacques L’Ecuyer, who co-founded the firm in 2000 and ...
BASF and PETRONAS Chemicals Group Berhad (PCG) will build a new world-scale production plant for highly reactive polyisobutene (HR-PIB) at the site of their existing joint venture, BASF PETRONAS Chemicals Sdn Bhd, in Kuantan, Malaysia. ...
Tags: chemicals, coating, BASF, PETRONAS Chemicals Group, paint and pigment
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
For full-year 2014, specialty metal and chemical products firm 5N Plus Inc of Montreal, Québec, Canada has reported revenue of $508.2m, up 10.7% on $459m for 2013. 5N Plus provides purified metals such as bismuth, gallium, ...
Tags: 5N Plus, Commodity Pricing
Epiluvac AB of Lund, Sweden has received an order for its EPI-1000X silicon carbide (SiC) reactor from a “leading European research center”. Installation and commissioning of the system will be completed during first-quarter ...
Tags: gas flows, heating system, Electrical
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
For third-quarter 2014, specialty metal and chemical products firm 5N Plus Inc of Montreal, Québec, Canada has reported revenue of $114.4m, down 16% on $136.6m last quarter but up 5% on $108.6m a year ago. “We reported ...
Tags: 5N Plus, chemical products
Deposition equipment maker Aixtron SE of Aachen, Germany says that Japanese manufacturer Showa Denko has qualified its most recent system for manufacturing silicon carbide (SiC) epitaxial wafers. The new AIX G5 WW (Warm-Wall) chemical vapor ...
BOSTON – EPA is proposing, at the request of the State of Maine, to require the sale of reformulated gasoline (RFG) in York, Cumberland, Sagadahoc, Androscoggin, Kennebec, Knox and Lincoln counties in southern Maine starting in June ...
Tags: EPA, Southern Maine, Service