Silvaco Inc of Santa Clara, CA, USA (which provides electronic design automation and IP software tools for process and device development), Purdue University and Purdue Research Foundation have formed a partnership to extend Moore’s ...
Tags: TCAD tools
The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
AKHAN Semiconductor Inc of Gurnee, IL, USA, which specializes in the fabrication and application of lab-grown, electronics-grade diamond, says that the Japan Patent Office has issued it patent JP6195831 (B2) covering a method for the ...
Carbonics Inc of Marina Del Rey, CA, USA has launched its ZEBRA carbon-on-silicon technology for radio frequency (RF) components and devices in wireless, communications, defense and aerospace markets. Carbonics was spun out from ...
Even just a few short years ago, LED lighting was largely viewed as something that would be nice to have, but wasn’t exactly practical for widespread use, due in large part to the cost. Well, the so-called “LED revolution” ...
Tags: LED lighting, LED lights
South Korea's Seoul National University has integrated two Advanced Vacuum plasma processing systems from equipment maker Plasma-Therm LLC of St Petersburg, FL, USA into its nanotechnology fabrication lab, which supports multiple users ...
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 ...
Tags: HexaTech, AlN, semiconductor
II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that its CEO Liam Devlin is presenting the paper 'Designing GaN PA MMICs' in the Microwave, ...
Tags: Plextek, Microwave Circuit
After a successful 2013, the market for RF power semiconductors for wireless infrastructure blew off the chart in 2014, according to a new report from market analyst firm ABI Research. The Asia-Pacific region, and China specifically, ...
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...