Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
Cree Inc of Durham,NC,USA has launched a range of 50V gallium nitride(GaN)high-electron-mobility transistor(HEMT)devices that,it is claimed,enable a significant reduction in the energy needed to power cellular networks. The world's ...
Tags: GaN RF, HEMT technology, cost saving, cellular-network
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors