In hall A5, booth 343 at electronica 2012 in Munich, Germany (13–16 November), Cree Inc of Durham, NC, USA is announcing the commercially availability of what it claims is the industry’s first fully qualified, production-ready all-SiC (silicon carbide) power module.
Rated at 100A current handling and 1200V blocking, the new high-frequency module (CAS100H12AM1) allows higher efficiency, compact and lighter-weight systems that can result in lower total system costs compared with conventional silicon-based technologies, it is reckoned.
“An all-SiC module with these specifications enables us to meet our transit customers’ demands for reduced size and weight of auxiliary power converters, while meeting efficiency and cost targets,” comments Fisal Al-Kayal, innovation and research engineer at Alstom Belgium Transport.
The module includes SiC MOSFETs and SiC Schottky diodes in a 50mm half-bridge configuration rated to a maximum junction temperature of 150°C. The SiC components enable the module to be operated at exceptionally high switching frequencies that can reduce the size, weight and cost of the power conversion system. The new power module has demonstrated up to 100kHz switching frequency. Target applications include high-power converters, industrial motor drives, solar inverters and uninterruptible power supplies.
“The 1200V, 100A dual module extends our existing discrete MOSFET and diode products into higher-power applications,” explains Dr Mrinal Das, product marketing manager, Cree Power and RF. “The efficient switching characteristics of an all-SiC module should allow system designers to meet customer demands for reduced size, weight and cost of the end-system, while reducing global energy consumption,” he adds. “Already, Cree SiC power devices have eliminated an estimated 1 million metric tons of annual CO2 emissions – the equivalent to planting 95 million trees.”
