Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
X-FAB Silicon Foundries AG of Erfurt, Germany - an analog/mixed-signal and micro-electro-mechanical systems (MEMS) foundry - has announced what it claims is the first cost-efficient 180nm silicon-on-insulator (SOI) technology for automotive ...
Tags: X-FAB, SOI, electrical components
What is decribed as the first European-made device based on gallium nitride (GaN) to be sent into space has completed its second year of operations. Hosted by the European Space Agency (ESA) on its Earth-observing Proba-V mini-satellite in ...
X-FAB Silicon Foundries, the leading More than Moore foundry, has announced the industry’s first cost-efficient 180nm SOI technology for automotive and industrial applications that need to operate in harsh environments. X-FAB's new ...
Tags: X-FAB, SOI technology, high-voltage devices, auto accessories
VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that its CEO Liam Devlin is presenting the paper 'Designing GaN PA MMICs' in the Microwave, ...
Tags: Plextek, Microwave Circuit
GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...
Tags: GaN Systems, Power electronics, GaN SiC
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
Microsanj LLC of Santa Clara, CA, USA - a supplier of high-resolution, thermoreflectance imaging analysis (TIA) c, tools and consulting services - participated in three conferences during Microwave Week in Phoenix, Arizona. At the 2015 ...
Tags: TIA system, thermal imaging system
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode ...
Tags: GaN Systems, Power electronics
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers