Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
The Fédération des Chambres de Commerce du Québec (FCCQ) for Innovation and International Market Development has named Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave ...
Tags: GaN HEMT
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology fabricated on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, says that its LED lamps have been installed at the University of Oxford's Pitt Rivers ...
Tags: Soraa, GaN-on-GaN, Oxford, LED Lighting
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...
Tags: AC driver, railway applications, high power
Eulitha AG of Würenlingen, Switzerland (a spin-off of the Paul Scherrer Institute in Villigen that offers nano-lithographic equipment and services for photonics and optoelectronic applications) says that one of its PhableR 100 ...
Tags: Eulitha, Nanopatterning HB-LEDs
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the 2500-G Series 50W Ku-band gallium nitride (GaN)-based airborne-grade solid-state power block/block up-converter ...
Tags: GaN HEMT, Advantech Wireless