Epiluvac AB of Lund, Sweden says that it is now offering silicon carbide (SiC) chemical vapor deposition (CVD) epitaxy reactors in various configurations. As one of the most interesting semiconductor materials in electrical power ...
Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...
Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM, Transistor, Electrical
UK full-service energy-efficiency specialist SaveMoneyCutCarbon.com has announced a new partnership as Master Distributor for Soraa Inc of Fremont, CA, USA and its GaN-on-GaN (gallium nitride on gallium nitride) technology, which provides ...
Tags: Soraa, Distributor, Electrical
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component
Google and the Institute of Electrical and Electronic Engineers’ Power Electronics Society (IEEE PELS) have launched the Little Box Challenge, an open competition with a $1m prize to create a much smaller but higher-power-density ...
Tags: inverters, GaN SiC, Power Inverter
Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reached a defense production milestone, completing the Defense Production Act Title III Gallium Nitride on Silicon Carbide (GaN ...
Tags: TriQuint, GaN, RF, GaN-on-SiC
Agnitron Technology Inc of Eden Prairie, MN, USA is scheduled to ship its latest 1500°C+ reactor upgrade for the Veeco metal-organic chemical vapor deposition (MOCVD) D-series Legacy System platform. The single 2”- or ...
Tags: Veeco MOCVD, Reactor
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early ...
Tags: Power electronics GaN SiC, Electric Vehicle, Electrical, Electronics
For full-year fiscal 2014 (ended 29 June), Cree Inc of Durham, NC, USA has reported record revenue of $1.65bn, up 19% on fiscal 2013’s $1.39bn. Fiscal Q4/2013 Q1/2014 Q2/2014 Q3/2014 Q4/2014 Revenue $375m $391m $415.1m $405.3m ...
Tags: Cree LED, Electrical, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM GaN RF power transistors, transistors, Electrical, Electronics
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics