Greiner Packaging has announced the launch of the new coextrusion barrier foil facility at the Johannes Kepler University (JKU) in Linz, Austria. Co-financed by Greiner Packaging, the coextrusion barrier foil facility has been launched as ...
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
Extrusion and converting systems firm Davis-Standard is planning to expand its manufacturing facility at in Pawcatuck, Connecticut, US. The expansion plan, which includes adding 15,000ft2 of manufacturing space, is expected to create over ...
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
US-based Dow Chemical Company has developed new recyclable stand-up pouches using the RecycleReady technology. Made with Retain polymer modifiers, the stand-up pouch features barrier film that can be recycled in a polyethylene recycling ...
Tags: RecycleReady technology, recycling stream, breakthrough
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
Semiconductor process equipment maker SAMCO Inc has held a completion ceremony for its second production center (a two-floor steel-framed building adjacent to the headquarters in Kyoto, Japan), which began construction in January and is ...
Tags: Semiconductor, PECVD, MOCVD
ZSW (Zentrum für Sonnenenergie- und Wasserstoff-Forschung — or Center for Solar Energy and Hydrogen Research — Baden-Württemberg) in Stuttgart, Germany has set a world record for thin-film photovoltaic cell energy ...
Tags: ZSW, silicon cells
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
Chicago-based private equity firm Geneva Glen Capital (GGC) has acquired Dianne’s Fine Desserts from Superior Capital Partners for undisclosed sum. Chicago-based private equity firm Geneva Glen Capital (GGC) has acquired Dianne's ...
Tags: GGC, Dianne's Fine Desserts
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates