QD Laser Inc of Kanagawa, Japan and the Institute for Nano Quantum Information Electronics (NanoQuine) at the University of Tokyo have announced the development of wearable see-through display Laser Eyewear (LEW) based on laser retina ...
Tags: QD Laser, Electrical, Electronics, Display
In booth #1933B at the LightFair International 2014 exhibition in Las Vegas (3-5 June), LatticePower of Nanchang, Jiangxi Province, China – which claims to be the first firm to commercialize gallium nitride on silicon (GaN-on-Si) LEDs ...
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
Quantum Fuel Systems Technologies Worldwide has signed a long-term agreement with Ryder System for the purchase and supply of complete compressed natural gas (CNG) fuel systems for trucks. With the agreement, Ryder will purchase ...
Tags: CNG Trucks, Ryder, Quantum Fuel Systems
Taiwan's National Tsing Hua University has claimed the highest optical 3dB modulation bandwidth of ~463MHz at 50mA for a 500nm-wavelength blue-green indium gallium nitride (InGaN) LED [Chien-Lan Liao et al, IEEE Electron Device Letters, ...
Tags: blue-green LEDs, taiwan, LED, LED light, Electrical, Electronics
Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...
Tags: Electrical, Electronics
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
The US Department of Energy's National Energy Research Scientific Computing Center (NERSC) has conducted simulations showing that nanostructures half the width of a DNA strand could enhance the efficiency of LEDs. In particular, efficiency ...
Tags: InN Green LEDs, LED
According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
ETH Zürich and Philips Technologie GmbH have developed 981nm-wavelength passively mode-locked electrically pumped vertical-external-cavity surface-emitting lasers (EP-VECSELs) with “the shortest pulses (2.5ps), highest average ...
Tags: EP-VECSELs InGaAs GaAs
Global copper supply is expected to remain in surplus in 2014 and continue to exert downward pressure on prices, Australia's Bureau of Resources and Energy Economics forecast in its March quarter report. "Although consumption is forecast ...
Tags: Copper, copper supply, Copper prices
POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: POET, Electrical, Electronics
Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN