University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...
Tags: GaN MBE Veeco, Electrical, Electronics
Magnolia Solar Corp of Woburn, MA and Albany, NY, USA has entered into a letter of intent with Singapore-based Solar Silicon Resources Group Pte Ltd (SSRG) to acquire their assets and merge their business interests. Magnolia's subsidiary ...
Tags: Electrical, Electronics
Apple's reported iWatch, which is expected to be released in late 2014, will use sapphire watch covers, according to research firm LEDinside. If iWatch sales reach market estimations of 60 million in 2015, the device will make up 27% of ...
There were 1,917 MOCVD sets in operation globally in May 2014 and Taiwan-based LED makers accounted for 28.6% of the number, followed by Japan-based makers with 23.8%, China-based makers with 22.9%, and South Korea-based makers with 14.1%, ...
Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has announced availability of its ...
Tags: LED, Electrical, Electronics
In booth #1933B at the LightFair International 2014 exhibition in Las Vegas (3-5 June), LatticePower of Nanchang, Jiangxi Province, China – which claims to be the first firm to commercialize gallium nitride on silicon (GaN-on-Si) LEDs ...
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
Out of sapphire substrate non-LED applications, mobile devices have shown the strongest demand. Sapphire substrate non-LED applications are projected to reach a 32% share in 2014, with mobile device applications taking a 21% share, ...
Tags: LED applications, mobile devices
SAP AG announced the SAP Fashion Management application, developed in collaboration with leading fashion brands and retailers, as well as through a collaboration with attune consulting. Initially announced in January 2014, SAP Fashion ...
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
The sale of “The Winston Blue” helped bring Christie’s auction held Wednesday in Geneva to the status of highest total ever for a jewelry auction. The diamond sold for more than $23 million. See the top 10 lots from ...
Tags: jewelry market, Christie's Sale
The Bridgestone stand at the Reifen International Trade Fair will herald the arrival of its first Agri tire. Our eyes and ears at the Reifen 2014 International Trade Fair this year will be the intrepid John Stone, who writes European ...
Tags: Tire, Tyre, Auto Parts
GT Advanced Technologies (Nasdaq:GTAT) announced that it will be making its next generation ASF®165 sapphire growth furnace, for the production of high volume and high quality sapphire material, commercially available in Q3'14. The ...
Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED