An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor
At the 2014 Symposia on VLSI Technology and Circuits in Honolulu, Hawaii (9-13 June), a team at Purdue University, SEMATECH of Albany, NY, USA (the international research consortium of semiconductor device, equipment, and materials ...
Tags: SEMATECH CNSE SRC, Electrical, Electronics
At the PCIM (Power Conversion Intelligent Motion) Asia 2014 conference in Shanghai World Expo Exhibition and Convention Center, China (17-19 June), Michael de Rooij (executive director, Application Engineering) from Efficient Power ...
Tags: Electrical, Electronics
At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: POET, Process Equipment
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced DrGaNPLUS evaluation ...
Tags: Half-Bridge Converter, Electronics
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
Cree Inc of Durham, NC, USA has introduced what it claims are the industry’s highest-power continuous wave (CW) RF gallium nitride (GaN) high-electron-mobility transistors (HEMTs) packaged in a dual-flat no-leads (DFN) format. ...
Tags: GaN Transistors, CREE
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting in booth 9-523 at PCIM (Power Conversion Intelligent ...
Tags: GaN Systems, High-Current Devices
Researchers from The University of Texas at Dallas and the University of Tokyo have created electronic devices that become soft when implanted inside the body and can deploy to grip 3-D objects, such as large tissues, nerves and blood ...
Tokyo-based Mitsubishi Electric Corp has started shipping samples of new 1200V hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. Featuring SiC diodes, the modules achieve high efficiency, ...
Tags: Mitsubishi Electric, SiC power modules, High-Frequency Switching
Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
At the PCIM (Power Conversion Intelligent Motion) Europe 2014 conference in Nuremberg, Germany (20-22 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power ...
Tags: EPC E-mode GaN FETs GaN-on-silicon, Electrical, Electronics
As high-data-rate applications put more strain on LTE wireless networks, solutions such as small-cell base-stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader ...
Tags: GaN HEMTs, LTE wireless networks