Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has announced the availability and full technical support for 17 ...
Tags: Electrical, Electronics
Tokyo-based Mitsubishi Electric Corp has received an order for its railcar traction inverter with all-silicon carbide (SiC) power modules (made with SiC transistors and SiC diodes), placed by Odakyu Electric Railway Co Ltd. This is the ...
Tags: Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has created and posted on line an 11-part ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
In case it wasn't clear already, Intel and Microsoft are no longer joined at the hip. Intel is trying desperately to grow its share of the tablet market, and with Windows flunking out on those devices, Android is the flavour of the month. ...
Tags: Intel, Microsoft, tablet market
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9016 half-bridge ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: POET, Electrical, Electronics
According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
Raytheon Company of Waltham, MA, USA says that it has achieved another milestone for next-generation gallium nitride (GaN) radio-frequency (RF) semiconductor technology. Through the US Defense Advanced Research Projects Agency (DARPA) Near ...
Tags: GaN-on-Diamond, GaN-on-SiC
Altatech Semiconductor S.A. of Montbonnot, near Grenoble, France (a subsidiary of Soitec since January 2012) has received an order from the University of Washington in Seattle for an AltaCVD chemical vapor deposition (CVD) system, whose ...
Tags: CVD System, Process Materials
At the 39th annual Government Microcircuit Applications and Critical Technology (GOMACTech 2014) conference in Charleston, SC, USA (3 April), Alex Lidow, CEO & co-founder of Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, ...
Tags: DC-DC Converter, EPC