Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...
Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical
Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...
Tags: PV Performance, Electrical
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
Everything you need to know about the Samsung Galaxy S6 The Samsung Galaxy S6 release date is fast approaching, and with 2015 now upon us, a flurry of Galaxy S6 leaks and rumours have started to surface. With the Galaxy S6 release date ...
Tags: Samsung, Consumer Electronics
Samsung has successfully built new DRAM that can be packaged as a 4GB module for mobile devices. The new 8-gigabit LPDDR4 mobile DRAM is built using Samsung’s 20nm manufacturing process, and trumps the previous 4-gigabit DDR3 RAM ...
Tags: Samsung, Smartphones
EV Group (EVG) of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) has established the NILPhotonics Competence Center, which is designed to assist customers ...
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
Chip suppliers are expected to begin to pull in orders for wafers in order to produce chips for non-Apple device vendors, a move which is likely to start a new round of competition for wafer capacity, according to industry sources. Most ...
Tags: Wafer, Chip suppliers
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
At the SEMICON West 2014 trade show in San Francisco (8-10 July), process control and yield management solutions provider KLA-Tencor Corp of Milpitas, CA, USA launched four new systems - the 2920 Series, Puma 9850, Surfscan SP5 and eDR-7110 ...
Tags: KLA-Tencor, IC Technologies
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor