For its fiscal second-quarter 2016 (to 31 March), Emcore Corp of Alhambra, CA, USA - which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for the broadband and specialty fiber-optics markets - has ...
Tags: Emcore, optical chips
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Samsung Electronics Co Ltd of Seoul, Korea has introduced inFlux, a new lineup of high-flux, linear LED modules optimized for industrial lighting applications such as plants, parking lots and warehouses. The modules serve as a replacement ...
Tags: Samsung LEDs, Industrial Lighting
Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has completed its acquisition of EpiWorks Inc of Champaign-Urbana, IL, USA (which manufactures epitaxial wafers for optical components, wireless devices ...
Tags: EpiWorks, Engineered materials
Sensor Electronic Technology (SETi) has announced that it has acquired the commercial operations of UV LED developer and manufacturer, Nitek, strengthening its position as global leaders in the UV LED marketplace. The transaction combines ...
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Aucksun’s financial statement for first half of 2015 revealed, the company’s revenue rose 9.73% from a year earlier in 2Q15 to RMB 732 million (US$ 126 million), with RMB 137 million net profit, translating into 31.27% ...
Tags: Aucksun, LED lighting, LED chips
Led by China, the solar industry will grow at a CAGR of 8.3% – from 37.5 GWp (gigawatt peak) in 2013 to 65.6 GWp in 2019 – but emerging trade disputes involving the Asian giant, as much as global policies, cast a shadow over ...
Tags: solar industry, Market, X-Si
For third-quarter 2015, AXT Inc of Fremont, CA, USA, which makes gallium arsenide (GaAs, indium phosphide (InP) and germanium (Ge) substrates and raw materials, has reported revenue of $18.4m, down 12.4% on $21m last quarter and down 20% on ...
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...
Tags: Lasertec, SiC Wafers
For first-half 2015, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has reported unaudited results in line with expectations and its July trading update. Revenue was £53.2m, down 11% on £60m in second-half ...
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Technology engineering & licensing firm ALLOS Semiconductors GmbH of Dresden, Germany have concluded its joint project to establish its mature 150 and 200mm gallium nitride on silicon (GaN-on-Si) technology at Epistar Corp of Hsinchu ...
Tags: electronics, semiconductor, Azzurro GaN-on-Si, Epistar LEDs