Aethercomm Inc of San Marcos, CA, USA, which designs and makes high power RF amplifiers, subsystems and systems for use in radar, electronic warfare, communication systems, and test & measurement, is launching the SSPA 6.000-18.000-50 ...
Tags: power amplifiers, Electrical, Electronics
Comtech Telecommunications Corp says that its subsidiary Comtech PST Corp in Melville, NY, USA is introducing the model BMC858109-600 gallium nitride (GaN) power amplifier for X-band radar applications. The AB linear design operates over ...
Tags: Microwave Amplifier, Electrical, Electronics
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has produced what are reckoned to be the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafers, which ...
Tags: Triquint, Electronics, HEMT devices
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
In conjunction with the 2013 Government Microcircuit Applications and Critical Technology conference (GOMACTech 13) in Las Vegas (11-14 March), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of ...
Tags: TriQuint, GaN Ku-Band PA, Broadband Integrated Limiter/LNA
On 26 February at the 2013 Mobile World Congress in Barcelona, Spain (1–5pm at the Barcelona Mandarin Oriental), Cree Inc of Durham, NC, USA, which makes gallium nitride (GaN) RF components, and fabless semiconductor firm Eta Devices ...
Tags: Cree, Eta, Record-Efficiency Power Amplifier, Mobile Base-Stations
Cree Inc of Durham, NC, USA, which makes gallium nitride (GaN) RF components, and pan-European electronics distributor Acal BFi Ltd have signed a franchise agreement to increase the sale of Cree’s RF components in Italy, Spain, ...
Tags: Cree GaN RF, electronics, gallium nitride
Following the previous release of the RF393X series of unmatched power transistors (UPTs) targeting continuous wave (CW) and pulsed peak power applications, RF Micro Devices Inc of Greensboro, NC, USA has production released two highly ...
Tags: RFMD, GaN power transistor, unmatched power transistors, continuous wave
Cree Inc of Durham,NC,USA has launched a range of 50V gallium nitride(GaN)high-electron-mobility transistor(HEMT)devices that,it is claimed,enable a significant reduction in the energy needed to power cellular networks. The world's ...
Tags: GaN RF, HEMT technology, cost saving, cellular-network
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA,is showcasing twelve new products at European Microwave Week in Amsterdam next week(29-31 October).These include new packaged ...
Silicon Valley-based Gaas Labs LLC,a private investment fund targeting the communications semiconductor market,has acquired privately held Nitronex Corp of Durham,NC,USA,which designs and makes gallium nitride(GaN)-based RF power ...
Tags: Gaas Labs, Nitronex, GaN-on-Si, RF power transistors, semiconducto
Cree Inc of Durham,NC,USA has released a new suite of Verilog-A proprietary nonlinear device models for its gallium nitride(GaN)RF devices(available free to Cree's RF customers),developed for use with leading RF design platforms from ...
Tags: Cree, GaN, RF devices, Verilog-A RF device models, IMS
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor
Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has unveiled its first RF power amplifier fabricated using gallium nitride(GaN)technology.Products will initially target the cellular ...
Tags: Semiconductor, Power Amplifier, Radar, Radio