The Fraunhofer Institute for Laser Technology ILT of Aachen, Germany has worked with RWTH Aachen University’s Institute of Physics (IA) to develop an analysis technology that, for the first time it is claimed, allows the structural ...
Tags: LED light, Laser system
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers
Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that researchers at Germany's Ulm University have used LayTec's EpiCurve TT ...
Tags: LayTec HVPE GaN, Electrical, Electronics
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
Researchers in France have developed a monolithic metal-organic vapor phase epitaxy (MOVPE) process for growing indium gallium nitride (InGaN) light-emitting diodes (LEDs) with a multiple quantum well (MQW) light converter [Benjamin ...
Tags: Electrical, Electronics
Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
Aixtron SE announced gas manufacturer Air Water Inc. based in Azumino, Japan has successfully installed a fully automated AIX G5 HT Planetary Reactorin a 8x6-inch configuration for the growth of GaN epitaxial layers. Following the system ...
Tags: LED, LED applications, Electrical, Electronics
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED